This material is positioned as an ABF-class / build-up compatible dielectric film, with the following key technical characteristics:

• Low dielectric constant: Dk ≈ 2.4–2.5 (high-frequency range)
• Low dielectric loss: Df ≈ 0.003
• Laser microvia capability, suitable for fine-pitch build-up processing
• Low-Tg stress-buffering behavior (Tg ≈ −40 °C), providing mechanical compliance for warpage mitigation
• Fully crosslinked thermoset network, irreversible after cure
• Defined post-cure process: 170 °C × 30 min, after which the material reaches a fully stabilized three-dimensional crosslinked state
• Thermal robustness: stable beyond 300 °C; no modulus degradation during 260 °C reflow; mechanical properties become more stable after post-cure

After completion of the defined 170 °C post-cure, both dielectric and mechanical properties show no further drift under subsequent thermal history, including multiple reflow cycles.
Accordingly, the post-cure step can be treated as a repeatable and well-controlled process window, rather than an in-use or progressive reaction.

We believe this material may be of interest for evaluation in:
• Selected build-up layers where low Dk / low Df performance and stress mitigation are simultaneously required
• ABF-compatible or hybrid build-up structures (e.g., BT core + build-up dielectric layers)
• Advanced packaging platforms sensitive to warpage control, mechanical compliance, and signal integrity margins

Supporting data—including DMA (first and second scans), DSC residual cure analysis, dielectric stability after thermal history, and laser microvia wall quality / metallization results—can be provided to support technical evaluation.

该材料定位为 ABF-class / 可兼容 build-up 工艺的介电胶膜，其主要技术特性如下：

• 低介电常数： Dk ≈ 2.4–2.5（高频区间）
• 低介电损耗： Df ≈ 0.003
• 支持激光微孔加工，适用于精细化 build-up 工艺
• 低 Tg 应力缓冲特性（Tg ≈ −40 °C），有助于提高机械顺应性并降低翘曲风险
• 完全交联的热固性网络结构，固化后反应不可逆
• 明确的后固化工艺窗口： 170 °C × 30 分钟 后进入完全稳定的三维交联终态
• 高温稳定性： 耐温超过 300 °C，在 260 °C 回流条件下模量不下降，经后固化后机械性能进一步稳定

在完成 170 °C 后固化工艺 后，材料在后续多次回流及其他热历史条件下，其介电性能与机械性能不再发生漂移。
因此，该后固化步骤可被视为可重复、可控的标准工艺窗口，而非使用过程中持续发生的反应。

我们认为该材料在以下应用场景中具有潜在评估价值：
• 同时对 低 Dk / 低 Df 与应力缓冲能力 有要求的特定 build-up 层
• ABF 兼容或混合型 build-up 结构（如 BT core + build-up 介电层）
• 对 翘曲控制、机械顺应性及信号完整性裕量 较为敏感的先进封装平台

我们可配合提供 DMA（一次/二次扫描）、DSC 残余反应分析、热历史后介电稳定性测试，以及激光孔壁质量与金属化可靠性数据，以支持进一步的技术评估。